Review Paper on New Technology Based Nanoscale Transistor
نویسندگان
چکیده
منابع مشابه
A nanoscale transistor based on gate-induced stochastic transitions
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a variable resistor, or a simple resistive element with I −V characteristics that can switch between ohmic and non-ohmic. By manipulating the gate voltage, stochas...
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ژورنال
عنوان ژورنال: Advances in Materials Science and Engineering: An International Journal (MSEJ)
سال: 2016
ISSN: 2394-0824
DOI: 10.5121/msej.2016.3103